Annealing Twinning in Boron-Doped Ni<SUB>3</SUB>Al

Millisecond Microwave Annealing of Ultra-shallow Boron Doped Silicon

Next generation Si IC transistors, i.e. the 65 nm node, will require ultra-shallow doped regions with depths less than 17 nm and concentrations high enough to get a sheet resistance, Rs, lower than 760 ohms/square [1]. The current state of implant technology, taking into account reasonable throughput and cost considerations, results in as-implanted junction profiles that are slightly shallower ...

Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing

Superconductivity in boron-doped diamond.

Superconductivity of boron-doped diamond, reported recently at T(c)=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond-stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high T(c), leading to very large electron-phonon matrix elements. The calculated coupling str...

Boron doped graphene nanoribbons

Submitted for the MAR07 Meeting of The American Physical Society Boron doped graphene nanoribbons THIAGO MARTINS, Instituto de Fisica Universidade de Sao Paulo, HIROKI MIWA, Instituto de Fisica, Universidade Federal de Uberlandia, ANTONIO J.R. DA SILVA, A. FAZZIO, Instituto de Fisica Universidade de Sao Paulo — We will present a detailed study of the electronic, magnetic and transport propertie...

Induction annealing and subsequent quenching: effect on the thermoelectric properties of boron-doped nanographite ensembles.

Boron-doped nanographite ensembles (NGEs) are interesting thermoelectric nanomaterials for high temperature applications. Rapid induction annealing and quenching has been applied to boron-doped NGEs using a relatively low-cost, highly reliable, laboratory built furnace to show that substantial improvements in thermoelectric power factors can be achieved using this methodology. Details of the de...